MRFE6S9205HR3 MRFE6S9205HSR3
7
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
400
?70
?10
1
3rd Order
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
5th Order
7th Order
100
10
?60
?50
?40
?30
?20
TWO?TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
100
?60
1
IM3?L
IM7?U
IM7?L
?10
?20
?30
?40
?50
10
VDD
= 28 Vdc, P
out
= 220 W (PEP), I
DQ
= 1400 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
IM5?U
Actual
30
110
?5
1
30
20
50
045Ideal
?1 dB = 51.81 W
VDD
= 28 Vdc, I
DQ
= 1400 mA
f = 880 MHz, Input PAR = 7.5 dB
?3 dB = 99.2 W
ηD
?2 dB = 73.12 W
40 50 60 70 80 90 100
?1
40
?2
35
?3
?4
25
Figure 9. Output Peak-to-Average Ratio
Compression (PARC) versus Output Power
Pout, OUTPUT POWER (WATTS)
OUTPUT COMPRESSION AT THE 0.01%
PROBABILITY ON CCDF (dB)
η
D
,
DRAIN EFFICIENCY (%)
17 10η
D
400
16
23
1
0
70
22 60Gps
25C
TC
= ?30
C
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc
IDQ
= 1400 mA
f = 880 MHz
G
ps
, POWER GAIN (dB)
η
D
, DRAIN EFFICIENCY (%)
?30C
21 5025C
20 4085C
19 3085C
18 20
100
10
VDD
= 28 Vdc, I
DQ
= 1400 mA
f1 = 875 MHz, f2 = 885 MHz
Two?Tone Measurements, 10 MHz Tone Spacing
IM3?U
IM5?L
0
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